Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Solder wettable contact – lead – or bond
Reexamination Certificate
2004-06-01
2009-11-03
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Solder wettable contact, lead, or bond
C257SE21412
Reexamination Certificate
active
07612455
ABSTRACT:
A layered structure comprises a variable wettability layer including a material that changes a critical surface tension in response to energy provided thereto, the wettability changing layer including at least a high surface energy part of large critical surface tension and a low surface energy part of low critical surface tension, a conductive layer formed on the variable wettability layer at the high surface energy tension part, and a semiconductor layer formed on the variable wettability layer at the low surface energy part.
REFERENCES:
patent: 5008732 (1991-04-01), Kondo et al.
patent: 5101288 (1992-03-01), Ohta et al.
patent: 5117299 (1992-05-01), Kondo et al.
patent: 5132676 (1992-07-01), Kimura et al.
patent: 5142390 (1992-08-01), Ohta et al.
patent: 5153753 (1992-10-01), Ohta et al.
patent: 5169693 (1992-12-01), Fujimura
patent: 5184239 (1993-02-01), Sano et al.
patent: 5214416 (1993-05-01), Kondo et al.
patent: 5319479 (1994-06-01), Yamada et al.
patent: 5369421 (1994-11-01), Tomono et al.
patent: 5400065 (1995-03-01), Tomono et al.
patent: 5436642 (1995-07-01), Oyamaguchi et al.
patent: 5543945 (1996-08-01), Kimura et al.
patent: 5652989 (1997-08-01), Chiba et al.
patent: 5759278 (1998-06-01), Tomono et al.
patent: 5853866 (1998-12-01), Watanabe et al.
patent: 5858093 (1999-01-01), Saitoh et al.
patent: 5968272 (1999-10-01), Tomono et al.
patent: 6117240 (2000-09-01), Tomono et al.
patent: 6368668 (2002-04-01), Kobayashi et al.
patent: 6514328 (2003-02-01), Katoh et al.
patent: 6707514 (2004-03-01), Kondoh et al.
patent: 6734029 (2004-05-01), Furusawa
patent: 6994414 (2006-02-01), Hashimoto et al.
patent: 2003/0087073 (2003-05-01), Kobayashi
patent: 2004/0043334 (2004-03-01), Kobayashi et al.
patent: 7-86600 (1995-03-01), None
patent: 2002-162630 (2002-06-01), None
patent: 2002-164635 (2002-06-01), None
patent: 2002-268585 (2002-09-01), None
patent: 2003-096034 (2003-04-01), None
patent: 2003-267982 (2003-09-01), None
U.S. Appl. No. 11/287,325, filed Nov. 28, 2005, Kondo, et al.
M. Furusawa, et al., Society for Information Display 2002, International Symposium Digest of Technical Paper, vol. XXXIII, pp. 753-755, “19.5L: Late-News Paper: Inkjet-Printed Bus and Address Electrodes for Plasma Display”, 2002.
T. Kawase, et al., Society for Information Display 2002, International Symposium Digest of Technical Paper, vol. XXXIII, pp. 1017-1019, “L-4: Late-New Paper: Active-Matrix Operation of Electrophoretic Devices With Inkjet-Printed Polymer Thin Film Transistors”, 2002.
H. Sirringhaus, et al., Science Magazine, vol. 290, pp. 2123-2126, “High-Resolution Inkjet Printing of All-Polymer Transistor Circuits”, Dec. 15, 2000.
U.S. Appl. No. 11/319,063, filed Dec. 28, 2005, Kondo et al.
U.S. Appl. No. 11/846,092, filed Aug. 28, 2007, Tomono, et al.
Fujimura Koh
Kondoh Hitoshi
Tano Takanori
Tomono Hidenori
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Ricoh & Company, Ltd.
Weiss Howard
LandOfFree
Layered structure for electron device including regions of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Layered structure for electron device including regions of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Layered structure for electron device including regions of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4095319