Layered low dielectric constant technology

Details Layered low dielectric constant technology Layered low dielectric constant technology

1994-10-28

1996-07-09

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257760, 257752, 257758, 257637, 257644, 257646, H01L 2348, H01L 2906, H01L 2352, H01L 2940

Patent

active

055347312

ABSTRACT:
A layered dielectric structure is provided, which separates a first layer of metal interconnects from each other in semiconductor devices and also separates the first layer from a second, overlying layer of metal interconnects for making electrical contact to the first layer of metal interconnects. The layered dielectric structure comprises: (a) a layer of an organic spin-on-glass material filling gaps between metal interconnects in the first layer of metal interconnects; (b) a layer of an inorganic spin-on-glass material to provide planarization to support the second layer of metal interconnects; and (c) a layer of a chemically vapor deposited oxide separating the organic spin-on-glass layer and the inorganic spin-on-glass layer. The layered dielectric structure provides capacitances on the order of 3.36 to 3.46 in the vertical direction and is about 3.2 in the horizontal direction. This is a reduction of 10 to 15% over the prior art single dielectric layer, using existing commercially available materials.

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