Layered crystal structure oxide

Details Layered crystal structure oxide Layered crystal structure oxide

1997-10-03

2000-11-07

Kopec, Mark

Compositions: ceramic

Ceramic compositions

Titanate, zirconate, stannate, niobate, or tantalate or...

501123, 423596, C04B 3501, C04B 3550

Patent

active

061436798

ABSTRACT:
Provided are a layered crystal structure oxide showing ferroelectricity or paraelectricity and a process for easily producing the same. A raw material containing Bi.sub.2 O.sub.3 as a flux is heated up to 1330.degree. C. or higher and 1450.degree. C. or lower at a suitable temperature-elevating rate (heating step); the raw material is maintained at this heating temperature for prescribed time (constant temperature step); and then, it is slowly cooled down to 800.degree. C. or higher and 1300.degree. C. or lower at a rate of 1.degree. C./hour or more and 20.degree. C./hour or less (slow cooling step). This makes it possible to evaporate the flux and take out directly Bi.sub.2 SrTa.sub.2 O.sub.9. In this Bi.sub.2 SrTa.sub.2 O.sub.9, Bi is partially substituted with Sr, and oxygen is selectively deficient or disordered. Or, Bi and O in the fluorite layer are relatively displaced each other in the polarization direction.

REFERENCES:
patent: 3847829 (1974-11-01), Bouchard
patent: 5340796 (1994-08-01), Cava et al.
patent: 5565414 (1996-10-01), Akimitsu et al.
patent: 5885648 (1999-03-01), Dougherty et al.
Rentschler "Substitution of lead into the bismuth oxide layers of the n=2 & n=3 Aurivillius phases" mat Res. Bull, vol. 32, No. 3, pp. 351-369, Mar. 1997.

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