Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2005-06-03
2010-02-09
Hu, Shouxiang (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S009000, C257S014000, C257SE29070, C257SE29071, C977S774000
Reexamination Certificate
active
07659538
ABSTRACT:
Quantum dots are positioned within a layered composite film to produce one-dimensional and multi-dimensional shift registers within the film. Charge carriers are driven into the quantum dots by energy in connected control paths. The charge carriers are trapped in the quantum dots through quantum confinement, such that the charge carriers form artificial atoms, which serve as dopants for the surrounding materials. The atomic number of each artificial atom is adjusted through precise variations in the voltage across the quantum dot that confines it. The position of the artificial atom in the film is moved by varying the location of confinement and thus operates as a shift register.
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McCarthy Wil
Snyder Gary E.
Dorsey & Whitney LLP
Hu Shouxiang
RavenBrick LLC
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