Layered and homogeneous films of aluminum and aluminum/silicon w

Details Layered and homogeneous films of aluminum and aluminum/silicon w Layered and homogeneous films of aluminum and aluminum/silicon w

1985-05-06

1987-06-16

Rutledge, L. Dewayne

Stock material or miscellaneous articles

All metal or with adjacent metals

Composite; i.e., plural, adjacent, spatially distinct metal...

428651, H01L 2348

Patent

active

046736239

ABSTRACT:
Layered structures (e.g., Al-Si/Ti/Al-Si . . . ) and homogeneous alloys of aluminum and aluminum/1 at. % silicon with titanium and tungsten and other refractory metals have been found to significantly reduce hillock densities in the films when small amounts of titanium or tungsten are homogeneously added. However, the resistivity of the films can become excessive. In addition, a new type of low density hillock can form. Layering of the films eliminates all hillocks and results in films of low resistivity. Such layered and homogeneous films made with Al-Si and Ti were found to be dry etchable. Electrical shorts in test structures with two levels of metal and LPCVD SiO.sub.2 as an interlayer dielectric have been characterized and layered films using Al-Si and Ti gave excellent results.

REFERENCES:
patent: 4492813 (1985-01-01), Kausche et al.
patent: 4527184 (1985-07-01), Fischer
R. W. Bower, Appl. Phys. Letters, vol. 23, No. 2, Jul. 15, 1973, pp. 99-101.
Vance Hoffman, Solid State Techn., Dec. 1976, pp. 57-66.
P. S. McLeod et al, J. Vac. Sci. Techn., vol. 14, No. 1, Jan./Feb. 1977, pp. 263-265.

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