Layered amorphous silicon containing photoconductive element hav

Details Layered amorphous silicon containing photoconductive element hav Layered amorphous silicon containing photoconductive element hav

1987-02-05

1988-11-22

Welsh, J. David

Radiation imagery chemistry: process, composition, or product th

Electric or magnetic imagery, e.g., xerography,...

Radiation-sensitive composition or product

430 67, 430 57, 430945, 430 95, 430 65, 430 60, G03G 5082

Patent

active

047865741

ABSTRACT:
A light-receiving member for electrophotography comprises a substrate and a light-receiving layer provided on the substrate comprising a photoconductive layer exhibiting photoconductivity comprising an amorphous material containing at least one of hydrogen atoms and halogen atoms as the constituent in a matrix of silicon atoms and a surface layer comprising an amorphous material containing silicon atoms, carbon atoms and hydrogen atoms and the constituents, said surface layer being changed in the distribution concentration in the layer thickness direction of the constituent elements such that matching optical gap is obtained at the interface with said photoconductive layer, and the maximum distribution concentration of the hydrogen atoms within said surface layer being 41 to 70 atomic percent.

REFERENCES:
patent: 4600670 (1986-07-01), Yamazaki
patent: 4673629 (1987-06-01), Yamazaki

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