Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Reexamination Certificate
2011-01-18
2011-01-18
Loke, Steven (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
C257S513000, C257S622000, C257S626000, C257S647000, C257SE23002, C257SE21546, C438S437000, C438S719000, C438S958000
Reexamination Certificate
active
07872333
ABSTRACT:
A layer system is described including a silicon layer and a passivation layer which is applied at least regionally to the silicon layer's surface, the passivation layer having a first, at least largely inorganic partial layer and a second partial layer, the second partial layer being made of an organic compound including silicon or containing such a material. In particular, the second partial layer is structured in the form of a “self-assembled monolayer.” Furthermore, a method is described for creating a passivation layer on a silicon layer, a first, inorganic partial layer being created on the silicon layer and a second partial layer, containing an organic compound including silicon or being made thereof, being created at least in certain areas on the first partial layer. Both partial layers form the passivation layer. The described layer system or the described method is particularly suited for creating self-supporting structures in silicon.
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Bernhard Winfried
Laermer Franz
Mueller Lutz
Ho Hoang-Quan T
Kenyon & Kenyon LLP
Loke Steven
Robert & Bosch GmbH
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