Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2007-03-13
2007-03-13
Ghyka, Alexander (Department: 2812)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C257SE23028
Reexamination Certificate
active
10996681
ABSTRACT:
The invention relates to a layer sequence on a substrate made from copper, a copper-based alloy, a copper-plated substrate or a nickel or a nickel-based alloy for production of a composite material, in which a covering layer, consisting of tin or a tin-based alloy, which is arranged at least over part of the substrate, a barrier layer, which is located between the substrate and the covering layer and is in direct contact with the substrate, the barrier layer consisting of at least one element selected from the group consisting of Fe, Co, Nb, Mo or Ta, and an intermediate layer and a reaction layer, which is located between the barrier layer and the covering layer, the intermediate layer consisting of at least one element selected from the group consisting of Cu and Ni. The reaction layer required between covering layer and intermediate layer consists of Ag, an Ag alloy or Pt and Pd and its alloys. Furthermore, the invention relates to a process for producing a composite material from the layer sequence with a subsequent heat treatment.
REFERENCES:
patent: 5916695 (1999-06-01), Fister et al.
patent: 6083633 (2000-07-01), Fister et al.
patent: 2003/0035977 (2003-02-01), Datta
patent: 2003/0091855 (2003-05-01), Tanaka et al.
patent: 3712691 (1988-06-01), None
patent: 64-064840 (1989-03-01), None
patent: 10-284667 (1998-10-01), None
B. C. Scott and M. E. Warwick, The Solid-State Reaction of Copper and Tin: An Assessment of the Value of an Iron Barrier Layer, 1983, vol. 61, pp. 43-45, Transactions of the Institute of Metal Finishing.
European Search Report dated Mar. 29, 2005 (3 pages).
Flynn ,Thiel, Boutell & Tanis, P.C.
Ghyka Alexander
Wieland-Werke AG
LandOfFree
Layer sequence for producing a composite material for... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Layer sequence for producing a composite material for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Layer sequence for producing a composite material for... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3796273