Semiconductor device manufacturing: process – Chemical etching
Patent
1997-09-09
1999-05-18
Powell, William
Semiconductor device manufacturing: process
Chemical etching
134 11, 156345, 216 67, 438793, H01L21/00
Patent
active
059045671
ABSTRACT:
A chemical vapor reaction method including (a) introducing a first reactive gas into a reaction chamber; (b) exciting the first reactive gas to form a first film over a substrate; (c) introducing a second reactive gas into the reaction chamber after the formation of the first film; (d) exciting the second reactive gas to form a second film on the first film wherein the first film constitutes one of a semiconductor material and an insulating material while the second film constitutes the other one of the semiconductor material and the insulating material; (e) introducing a cleaning gas including nitrogen fluoride into the reaction chamber; and (f) exciting the cleaning gas in order to perform a cleaning in the inside of the reaction chamber.
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Costellia Jeffrey L.
Ferguson Jr. Gerald J.
Powell William
Semiconductor Energy Laboratory Co,. Ltd.
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