Superconductor technology: apparatus – material – process – Processes of producing or treating high temperature... – Producing josephson junction – per se
Patent
1994-01-10
1995-06-06
King, Roy V.
Superconductor technology: apparatus, material, process
Processes of producing or treating high temperature...
Producing josephson junction, per se
505473, 505474, 505190, 505702, 427 62, 4272557, H01L 3924
Patent
active
054223385
ABSTRACT:
A thin film device comprising a substrate and an oxide superconductor film formed thereon, wherein said oxide superconductor film comprises atomic monolayers each composed of at least one kind of element of the oxide superconductor, which are deposited substantially in a vertical direction to the substrate so that the pereodicy of the lattice structure of the oxide superconductor is substantially maintained, and at an intermediate portion of the oxide superconductor film, at least a part of the atoms of the oxide superconductor is substituted by other element in the lattice structure of the oxide superconductor to form a non-superconductor interlayer, and the pereodicy of the lattice structure of the oxide superconductor film is substantially maintained across the interface between the oxide superconductor and said non-superconductor interlayer.
REFERENCES:
patent: 5034374 (1991-07-01), Awaji et al.
patent: 5061971 (1991-10-01), Takemura
patent: 5300484 (1994-04-01), Otani
Nakayama et al, "Epitaxial Growth of Bi-Sr-Ca-Cu-O Thin Films by Molecular Beam Epitaxy Technique with Shutter Control", Jpn. J. Appl. Phys. 28(10) Oct. 1989, pp. L1809-L1811.
Li et al, "Observation of Resistive and Magnetic Anomalies at 90-180K in Artificially Layered Ca.sub.1-x Sr.sub.x CuO.sub.2 Thin Films Grown by Laser Molecular Beam Epitaxy", Jpn. J. Appl. Phys. vol. 31 part 2, No. 7B Jul. 1992, pp. L934-L937.
J. M. Triscone, et al. "Y-Ba-Cu-O/Dy-Ba-Cu-O Superlattices: A First Step Towards the Artificial Construction of High-Tc Superconductors", Physical Review Letters, vol. 63, No. 9, Aug. 28, 1989, pp. 1016-1019.
M. Kanai, "Superconducting Superlattices" Verification of Two-Dimensional Nature in High T.sub.c Bi.sub.2 Sr.sub.2 (Ca.sub.1-x Y.sub.x)Cu.sub.2 O.sub.8 Superconductors, Appl. Phys. Lett. 57(2), 9 Jul. 1990, pp. 198-200.
J. M. Tarascon et. al. "Structural & Physical Properties of the Metal (M) Substituted YBa.sub.2 Cu.sub.3-x M.sub.x O.sub.7-y Perovskite", Physical Review B. vol. 37, No. 13, 1 May 1988, pp. 7458-7469.
S. X. Dou, et al. "Stability of Superconducting Phases in Bi-Sr-Ca-Cu-O and the Role of Pb Doping", Physical Review B, vol. 40, No. 7, 1 Sep. 1989, pp. 5266-5269.
Appl. Phys. Lett. 56(4): p. 391 (22 Jan. 1990), Venkatesan et al.
Appl. Phys. Lett. 55(19): p. 2032 (6 Nov. 1989), Rogers et al.
ISTEC Journal 2(3): p. 19 (1989), (Kawai).
Phys. Rev. B 37(13): p. 7458 (1 May 1988), Tarascon et al.
Jpn. J. Appl. Phys. 29(12):L2219 (Dec. 1990), Kasai et al.
Appl. Phys. Lett. 57(2): p. 198 (9 Jul. 1990), Kanai et al.
Appl. Phys. Lett. 58(13): p. 1443 (1 Apr. 1991), Tabata et al.
Physical Review Letters, vol. 64, No. 7, 12 Feb. 1990, New York pp. 804-807. J. M. Triscone, et al: "YBa2Cu3O7/PrBa2Cu3O7 Superlattices: Properties of Ultrathin Superconducting Layers . . . ".
IEEE Transactions On Magnetics vol. 25, No. 2, Mar. 1989, New York pp. 2534-2537. Tonouchi, M. et al: "Multiple Heteroepitaxy and Superlattice Formation of LnBaCuO/YBaCuO System".
Applied Physics Letters vol. 55, No. 19, Nov. 6, 1989, New York pp. 2032-2034. Rogers C. T. et al: "Fabrication of Heteroepitaxial YBa2Cu3O7-x-PrBa2Cu307-x-YBa2-Cu307-x Josephson Devices . . . ".
Physical Review Letters vol. 63, No. 9, Aug. 28, 1989, New York, pp. 1016-1019. Triscone, J. M. et al: "Y-Ba-Cu-O/Dy-Ba-Cu-O Superlattices: a first step towards the artificail construction . . . ".
Patent Abstracts of Japan, vol. 124, No. 23 (E-680) 9 Nov. 1988 & JP-A-63 160 273 (Fujitsu).
Patent Abstracts of Japan vol. 142, No. 36 (C-072) 18 May 1990 & JP-A-2 059 403 (Hitachi).
King Roy V.
Mitsubishi Chemical Corporation
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