Layer-by-layer process for forming B.sub.i -containing oxide sup

Superconductor technology: apparatus – material – process – Processes of producing or treating high temperature... – Coating

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505729, 505730, 427 62, 4271263, 4274192, 4274193, H01L 3924

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053407938

ABSTRACT:
A method of forming a Bi system copper oxide superconducting thin film of Bi.sub.2 Sr.sub.2 Ca.sub.n-1 Cu.sub.n O.sub.x (n.gtoreq.2) including at least the equivalent of a pair of a full CuO molecular layer and a full CaO molecular layer, by a layer-by-layer process (an atomic layer piling process) using MBE. In accordance with the method, the CuO and CaO needed for the film are deposited in a pile by alternately depositing CuO in an amount equal to a 1/m portion of a full CuO molecular layer and CaO in an amount equal to a 1/ m portion of a full CaO molecular layer in a manner similar to that used for superlattice structure formation. The alternate deposition of CuO and CaO layer portions is repeated m times where m is an integral number of not less than n. During the deposition process, the deposition time of each CuO portion is X/m, where X is the depositing formation time of one full CuO molecular layer, and the deposition time of each CaO portion is Y/m, where Y is the depositing formation time of one full CuO molecular layer.

REFERENCES:
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Tsukamoto et al., "low-temperature annealing effect on B.sub.i -S.sub.r -C.sub.a -C.sub.u -O thin films prepared by layer-by-layer depositon", Jpn. J. Appl. Phys 30(5A) May 1991, pp. L830-833.
Tomoji KAWAI: "Design and Synthesis of High Tc Superconducting Superlattice by Successive Deposition Method", Bulletin of the Japan Institute of Metals, vol. 29, No. 9, (1990), pp. 733-739.
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J. N. Eckstein et al., "Epitaxial growth of high-temperature superconducting thin films," Journal of Vacuum Science and Technology: Part B, vol. 7, No. 2, Mar. 1989, New York, N.Y., pp. 319-323.
S. Yokoyama et al., "Atomic Layer Growth of BiSrCaCuO by Molecular Beam Epitaxy Using Ozone under UV Irradiation," Japanese Journal of Applied Physics, supplements 22nd Conference on Solid State Devices and Materials, 1990, Tokyo, Japan, pp. 929-932.
J. N. Eckstein et al., "Atomically layered heteroepitaxial growth of single-crystal films of superconducting Bi.sub.2 Sr.sub.2 Ca.sub.2 Cu.sub.3 O.sub.x," Applied Physics Letters, vol. 57, No. 9, Aug. 27, 1990, New York, N.Y. pp. 931-933.

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