Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1992-05-01
1992-12-08
Munson, Gene M.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257233, 257293, 257294, H01L 2978, H01L 2714, H01L 3100
Patent
active
051702363
ABSTRACT:
Disclosed is a layer-built solid state image sensing device comprising: a first semiconductor layer of a first conductivity type; a plurality of optoelectro transducing storage elements having a first optoelectro transduction layer of a second conductivity type opposite to the first conductivity type selectively formed within regions isolated pixel column by pixel column by a first isolating layer of the first conductivity type on the first semiconductor layer surface of the first conductivity type; charge transfer elements having a first impurity layer of the second conductivity type formed in columns a regular distance away from optoelectro transducing storage element columns within the isolating areas on the first semiconductor layer surface, and a transfer conductive electrode layer buried within an insulating film selectively formed on the surface other than the first optoelectro transducing layer and a light shielding electrode provided to enclose the transfer electrode also buried within the insulating film, for reading signal charges stored in the optoelectro transducing storage elements; a second optoelectro transducing layer of the second conductivity type formed on the insulating film and connected to the first optoelectro transducing layer; and a second impurity layer of the first conductivity type for covering the surface of the second optoelectro transducing layer.
REFERENCES:
patent: 4323912 (1982-04-01), Koike et al.
patent: 4661830 (1987-04-01), Ohta et al.
patent: 4851887 (1989-07-01), Hagiwara
patent: 4912560 (1990-03-01), Osawa et al.
Kabushiki Kaisha Toshiba
Munson Gene M.
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