Lattice constant grading in the Al.sub.y Ga.sub.1-y As.sub.1-x S

Details Lattice constant grading in the Al.sub.y Ga.sub.1-y As.sub.1-x S Lattice constant grading in the Al.sub.y Ga.sub.1-y As.sub.1-x S

1978-09-25

1980-03-25

Edlow, Martin H.

357 30, 357 61, 357 88, H01L 2916

Patent

active

041953053

ABSTRACT:
Liquid phase epitaxy is employed to grow a lattice matched layer of GaAsSb on GaAs substrates through the compositional intermediary of the III-V alloy system AlGaAsSb which acts as a grading layer. The Al constituent reaches a peak atomic concentration of about 6% within the first 2.5 .mu.m of the transition layer, then decreases smoothly to about 1% to obtain a lattice constant of 5.74 A. In the same interval the equilibrium concentration of Sb smoothly increases from 0 to about 9 atomic percent to form a surface on which a GaAsSb layer having the desired energy bandgap of 1.1 ev for one junction of an optimized dual junction photolvoltaic device. The liquid phase epitaxy is accomplished with a step cooling procedure whereby dislocation defects are more uniformly distributed over the surface of growing layer.

REFERENCES:
patent: 4032951 (1977-06-01), DeWinter et al.
Saul, R., Journ. Electrochem. Soc., May 1971, vol. 118, No. 5, pp. 793-795.

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