Lattice constant grading in the Al.sub.y Ca.sub.1-y As.sub.1-x S

Details Lattice constant grading in the Al.sub.y Ca.sub.1-y As.sub.1-x S Lattice constant grading in the Al.sub.y Ca.sub.1-y As.sub.1-x S

1979-07-23

1981-01-20

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148172, 148173, H01L 21208

Patent

active

042460506

ABSTRACT:
Liquid phase epitaxy is employed to grow a lattice matched layer of GaAsSb on GaAs substrates through the compositional intermediary of the III-V alloy system AlGaAsSb which acts as a grading layer. The Al constituent reaches a peak atomic concentration of about 6% within the first 2.5.mu.m of the transition layer, then decreases smoothly to about 1% to obtain a lattice constant of 5.74 A. In the same interval the equilibrium concentration of Sb smoothly increases from 0 to about 9 atomic percent to form a surface on which a GaAsSb layer having the desired energy bandgap of 1.1 ev for one junction of an optimized dual junction photovoltaic device. The liquid phase epitaxy is accomplished with a step cooling procedure whereby dislocation defects are more uniformly distributed over the surface of the growing layer.

REFERENCES:
patent: 3537029 (1970-10-01), Kressel et al.
patent: 3560275 (1971-02-01), Kressel et al.
patent: 3729348 (1973-04-01), Saul
patent: 4032951 (1977-06-01), DeWinter et al.
patent: 4072544 (1978-02-01), DeWinter et al.
Antypas et al., J. Electrochem. Soc., vol. 120, No. 11, Nov. 1973, pp.1574-1577.
Panish et al., Metallurgical Transactions, vol. 2, March 1971, pp. 795-801.

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