Latid implants for increasing the effective width of transistor

Details Latid implants for increasing the effective width of transistor Latid implants for increasing the effective width of transistor

1993-09-24

1994-09-06

Thomas, Tom

Fishing, trapping, and vermin destroying

437 70, H01L 21265

Patent

active

053447875

ABSTRACT:
The diffusion of P-type channel-stop implants into regions where P-type channels are to be formed which will connect N-type source and drain regions of a transistor element on a P-type substrate is effectively compensated for through angled implantation of an N-type dopant material into these regions. Angle implantation is performed by tilting and rotating the wafer in the presence of an N-type ion beam.

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S. Wolfe, "Ion Implantation for VLSI", Silicon Processing for the VLSI Era, pp. 306-311.

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