Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Lateral bipolar transistor structure
Patent
1998-03-26
2000-05-09
Chaudhuri, Olik
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Lateral bipolar transistor structure
257560, 257561, 257565, 257578, 257563, H01L 2900, H01L 2358
Patent
active
060607610
ABSTRACT:
A lateral transistor includes a semiconductor substrate of a first conductivity type having a major surface; an emitter region of a second conductivity type in the semiconductor substrate on the major surface of the semiconductor substrate; a collector region of a second conductivity type in the semiconductor substrate on the major surface of the semiconductor substrate, spaced from and surrounding the emitter region, and including sides and corners; an electrically insulating layer on the major surface of the semiconductor substrate and including a first penetrating hole extending to the collector region except at a first of the corners and a second penetrating hole extending to the emitter region; a collector electrode contacting the collector region through the first penetrating hole and surrounding the emitter region except at the first corner; an emitter electrode at the same level as the collector electrode and contacting the emitter region through the second penetrating hole; and an emitter wiring layer at the same level as the emitter electrode, disposed on the insulating layer, and extending from the emitter electrode across the first corner.
REFERENCES:
patent: 5200803 (1993-04-01), Leduc
patent: 5783855 (1998-07-01), Kawakita et al.
Kawakita Keisuke
Yashita Takahiro
Chaudhuri Olik
Mitsubishi Denki & Kabushiki Kaisha
Mitsubishi Electric Engineering Co. Ltd.
Rao S H
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