Patent
1980-08-07
1982-11-30
Clawson, Jr., Joseph E.
357 13, 357 35, 357 36, 357 38, 357 49, H01L 2906
Patent
active
043618464
ABSTRACT:
Lateral type semiconductor devices are provided which can withstand a high applied reverse voltage and can be effectively employed in semiconductor integrated circuits with an enhanced integration density. These lateral type semiconductor devices include therein an island region formed in a semiconductor supporting region and a diffusion region formed in the island region. The radius of curvature at the pn junction surface of the diffusion region is selected to be at least 1.5 times larger than the depth of the diffusion region. The diffusion region includes electrode mounting portions of large area and the remaining portions having the form of a fine line.
REFERENCES:
patent: 3461360 (1969-08-01), Barson et al.
patent: 3651565 (1972-03-01), Talbert
patent: 3832732 (1974-08-01), Roberts
patent: 3878551 (1975-04-01), Callahan
patent: 3898483 (1975-08-01), Sander et al.
patent: 3958264 (1976-05-01), Magdo
patent: 3971060 (1976-07-01), Leuschner
patent: 4079403 (1978-03-01), Temple
patent: 4099998 (1978-07-01), Ferro et al.
patent: 4131809 (1978-12-01), Baars
patent: 4193836 (1980-03-01), Youmans et al.
patent: 4228451 (1980-10-01), Priel et al.
D. Fleming et al., "Open-Collector Structure Lateral PNP Transistor," IBM Tech. Discl. Bull., vol. 19, #2, Jul. 1976, pp. 569-570.
Clawson Jr. Joseph E.
Hitachi , Ltd.
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