Lateral-type semiconductor device

Details Lateral-type semiconductor device Lateral-type semiconductor device

1990-10-11

1992-01-21

Hille, Rolf

357 20, 357 48, 357 34, 357 50, H01L 2972

Patent

active

050831801

ABSTRACT:
A lateral-type semiconductor device is provided in which a p-emitter layer and a p-collector layer are formed on the exposed-surface side of an n-base layer. The exposed surfaces of the p-emitter layer and the n-base layer are substantially surrounded by the exposed surface of the p-collector layer. The n-base layer is connected to a base electrode or through a first heavily-doped region extending from under the n-base region to an exposed surface area on the outer-periphery side of the p-collector layer. In an alternative embodiment a second heavily-doped region for connecting the n-base layer and the first heavily-doped region can be provided.

REFERENCES:
patent: 4633291 (1986-12-01), Koyama
patent: 4684970 (1987-08-01), Sloane et al.

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