Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Patent
1995-10-25
1997-12-23
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
257374, 257335, H01L 2900, H01L 2976, H01L 2994
Patent
active
057010269
ABSTRACT:
To provide a lateral MISFET that has a uniform and reliable gate insulation film, and exhibits low on-resistance and excellent balance between the breakdown voltage and on-resistance. The device of the invention has an n-type semiconductor substrate, in a part of the surface layer thereof is formed a trench. An n-drain region is formed in the bottom of the trench. A side wall oxide film is formed on the side face of the trench. The trench is filled with a conductive material, on which is formed a drain electrode. A p-base region and an n-source region are self-aligned on the portion of the substrate in which the trench is not formed. A MIS gate is disposed on the p-base region. Since the portion of the substrate along the side wall oxide film functions as a drain drift region, the unit cell dimension are greatly reduced, the on-resistance is reduced, and therefore the trade-off relation between the breakdown voltage and the on-resistance is improved.
REFERENCES:
patent: 5539238 (1996-07-01), Malhi
Fujishima Naoto
Kitamura Akio
Fahmy Wael
Fuji Electric & Co., Ltd.
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