Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate
2007-07-10
2007-07-10
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
C257S280000, C257S329000, C257SE29257, C257SE21421, C257SE21629, C257S135000, C438S136000, C438S137000
Reexamination Certificate
active
11505813
ABSTRACT:
A junction field effect transistor is described. The transistor is made from a wide bandgap semiconductor material. The device comprises source, channel, drift and drain semiconductor layers, as well as p-type implanted or Schottky gate regions. The source, channel, drift and drain layers can be epitaxially grown. The ohmic contacts to the source, gate, and drain regions can be formed on the same side of the wafer. The devices can have different threshold voltages depending on the vertical channel width and can be implemented for both depletion and enhanced modes of operation for the same channel doping. The devices can be used for digital, analog, and monolithic microwave integrated circuits. Methods for making the transistors and integrated circuits comprising the devices are also described.
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Casady Jeffrey B.
Merrett Joseph N.
Sankin Igor
Mandala Jr. Victor A.
Merchant & Gould P.C.
Pert Evan
Raimund Christopher W.
Semisouth Laboratories, Inc.
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