Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Reexamination Certificate
2006-10-10
2006-10-10
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
C257S134000, C257S136000, C257S302000, C257S328000, C257S329000
Reexamination Certificate
active
07119380
ABSTRACT:
A junction field effect transistor is described. The transistor is made from a wide bandgap semiconductor material. The device comprises source, channel, drift and drain semiconductor layers, as well as p-type implanted or Schottky gate regions. The source, channel, drift and drain layers can be epitaxially grown. The ohmic contacts to the source, gate, and drain regions can be formed on the same side of the wafer. The devices can have different threshold voltages depending on the vertical channel width and can be implemented for both depletion and enhanced modes of operation for the same channel doping. The devices can be used for digital, analog, and monolithic microwave integrated circuits. Methods for making the transistors and integrated circuits comprising the devices are also described.
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Casady Jeffrey B.
Merrett Joseph N.
Sankin Igor
Kelber Steven B.
Mandala Jr. Victor A.
Merchant & Gould P.C.
Pert Evan
SemiSouth Laboratories, Inc.
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