Lateral transistor with multi-base contacts

Details Lateral transistor with multi-base contacts Lateral transistor with multi-base contacts

1979-03-15

1980-05-27

Clawson, Jr., Joseph E.

357 36, H01L 2974

Patent

active

042053331

ABSTRACT:
A semiconductor device in the nature of a bipolar transistor, which is formed on a low resistance substrate, comprises regions serving as emitter and collector separated by a gate region, the emitter and collector regions being separated from and encompassed by a surrounding region that may be maintained at a selected potential relative to the encompassed regions.

REFERENCES:
patent: 3463977 (1969-08-01), Grove et al.
patent: 3855609 (1974-12-01), Magdo et al.
patent: 3936856 (1976-02-01), Magdo
patent: 4075039 (1978-02-01), Sloan
patent: 4076556 (1978-02-01), Agraz-Guerena et al.
H. Lin et al., "Lateral Compl. Trans. Str. For Simult. Fab. of Funct. Blocks," Proc. IEEE, Dec. 1964, pp. 1491-1495. _
T. Frederiksen et al., "Our Advancing Technology-Transistor Advances," Motorola Monitor, vol. 8 #1, Apr. 1970, pp. 24,25. _

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