Patent
1987-05-06
1989-05-09
James, Andrew J.
357 34, 357 91, 357 2312, 357 43, H01L 2972
Patent
active
048293563
ABSTRACT:
The invention relates to a pnp lateral transistor comprised of two regions of p-type conductivity which are incorporated into the surface of a semiconductor area of n-type conductivity and constitute the emitter and collector the. The portion of the semiconductor area of n-type conductivity located between these two regions constitutes the active base region. The invention is based on the fact that the active base region includes below the semiconductor surface and adjacent to the emitter region and to the collector region, a buried semiconductor region containing additionally counter-doping impurities relative to the remaining surrounding base region area, which buried region produces a conductive channel for the minority charge carriers in the base region. This substantially reduces the parasitic surface recombination and substrate transistor influences and achieves a very high direct current gain in the lateral transistor.
REFERENCES:
patent: 4076556 (1978-02-01), Agraz-Gvereua et al.
patent: 4109272 (1978-08-01), Herbst et al.
patent: 4115797 (1978-09-01), Hingarh et al.
patent: 4131908 (1978-12-01), Daub et al.
patent: 4283236 (1981-08-01), Sirsi
patent: 4419685 (1983-12-01), Sugawara et al.
patent: 4669177 (1987-06-01), D'Arrigo et al.
Patent Abstracts of Japan, vol. 4, No. 162 (E-33)[644], Nov. 12, 1980.
James Andrew J.
Mintel William A.
Telefunken electronic GmbH
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