Patent
1990-07-05
1991-11-12
James, Andrew J.
357 34, 357 56, 357 59, 357 68, H01L 2972, H01L 2906, H01L 2904, H01L 2348
Patent
active
050652109
ABSTRACT:
A lateral transistor with a fine structure includes a semiconductor substrate of one conductivity type on which a mesa-shaped projection of opposite conductivity type is provided. The projection has side walls opposed to each other and serves as a collector region. A base region of one conductivity type is provided in one side wall of the projection, while a collector contact region is provided in the other side wall thereof. An emitter region of opposite conductivity type is also formed in the base region. A base contact layer of polysilicon is provided on a field oxide layer and is in contact with the base region at the edge. In the same manner, a collector contact layer of polysilicon provided on the field oxide layer is in contact with the collector contact region at the edge.
REFERENCES:
patent: 4688073 (1987-08-01), Goth et al.
patent: 4738624 (1988-04-01), Iyer et al.
patent: 4764799 (1988-08-01), Malaviya
A. W. Wieder, "Processing for a Lateral PNP Transistor in the Submicron Range", IBM Technical Disclosure Bulletin, vol. 21, No. 10, Mar. 1979, pp. 4050-4052.
"Improved Base Contact for Collapsor Device", IBM Technical Disclosure Bulletin, vol. 32, No. 6A, Nov. 1989, pp. 49-51.
Deal Cynthia S.
James Andrew J.
Kabushiki Kaisha Toshiba
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