Patent
1990-07-03
1991-08-27
Hille, Rolf
357 34, 357 59, 357 56, H01L 2972, H01L 2904, H01L 2906
Patent
active
050437860
ABSTRACT:
A method of fabricating a lateral transistor is provided, including the steps of: providing a body of semiconductor material including a device region of a first conductivity type; patterning the surface of the device region to define a first transistor region; filling the patterned portion of the device region surrounding the first transistor region with an insulating material to a height generally equal to the surface of with first transistor region; removing portions of the insulating material so as to define a pair of trenches generally bounding opposite sides of the first transistor region; filling the pair of trenches with doped conductive material of opposite conductivity type to the first transistor region; and annealing the semiconductor body whereby to form second and third transistor regions of opposite conductivity type to the first transistor region in the opposing sides of the first transistor region.
REFERENCES:
patent: 3600651 (1971-08-01), Duncan
patent: 4333227 (1982-06-01), Horng et al.
patent: 4378630 (1983-04-01), Horng et al.
patent: 4663831 (1987-05-01), Birrittella et al.
patent: 4688073 (1987-08-01), Goth et al.
patent: 4743565 (1988-05-01), Goth et al.
IBM Technical Disclosure Bulletin, vol. 13, No. 6, Nov. 1970, p. 1457, "Lateral PNP with Gain Bandwidth Product".
Desilets Brian H.
Hsieh Chang-Ming
Hsu Louis L.
Brandt Jeffrey L.
Fahmy Wael
Hille Rolf
International Business Machines - Corporation
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