Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Lateral bipolar transistor structure
Patent
1995-12-22
1998-07-21
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Lateral bipolar transistor structure
257565, 257557, H01L 2900
Patent
active
057838550
ABSTRACT:
A lateral transistor includes a first conductivity type semiconductor substrate, a first second conductivity type region in the substrate, a second second conductivity type region in the substrate spaced from and partially surrounding the first region including a plurality of sides and corners; an electrically insulating film covering the semiconductor substrate and including respective penetrating holes extending to the first and second regions; a first metal film disposed on the insulating film and contacting the second region through a first of the penetrating holes; and a second metal film disposed on the insulating film and contacting the first region through a second of the penetrating holes wherein the first metal film is missing opposite a first of the corners of the second region and the second metal film extends across the second region at the first corner.
REFERENCES:
patent: 3465214 (1969-09-01), Donald
patent: 5200803 (1993-04-01), Leduc
Kawakita Keisuke
Yashita Takahiro
Jackson Jerome
Kelley Nathan K.
Mitsubishi Denki & Kabushiki Kaisha
Mitsubishi Electric Engineering Co. Ltd.
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