Lateral transistor

Details Lateral transistor Lateral transistor

1988-07-13

1989-02-21

Edlow, Martin H.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 2313, 357 36, 357 86, 307255, H01L 2978, H01L 2972, H03K 1760

Patent

active

048070092

ABSTRACT:
In a lateral transistor having a first semiconductor region of one conductivity type, and an emitter region and a collector region both having the opposite conductivity type and disposed in the first semiconductor region; a second semiconductor region having the opposite conductivity type is disposed opposite to the emitter region with respect to the collector region. The thus obtained lateral transistor has a characteristic that a current flowing to the substrate is prevented under a saturation operation state and is suitably used to form, e.g., a current-mirror type constant-current circuit constituting a switching device having improved threshold characteristics.

REFERENCES:
patent: 3676714 (1972-07-01), Wensink et al.
patent: 3878551 (1975-04-01), Callahan, Jr.
patent: 4044373 (1977-08-01), Nomiya et al.
patent: 4345166 (1982-08-01), Allen et al.
patent: 4350904 (1982-09-01), Cordell

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