Lateral thyristor structure for protection against...

Details Lateral thyristor structure for protection against... Lateral thyristor structure for protection against...

2005-05-10

2005-05-10

Loke, Steven (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

C257S146000, C257S162000, C257S173000, C257S140000, C257S362000

Reexamination Certificate

active

06891206

ABSTRACT:
To protect against electrostatic discharges in monolithic integrated circuits in CMOS technology, a lateral thyristor structure is presented which has a much lower firing voltage compared to conventional thyristor structures.

REFERENCES:
patent: 5072273 (1991-12-01), Avery
patent: 5455436 (1995-10-01), Cheng
patent: 5903420 (1999-05-01), Ham
patent: 5903424 (1999-05-01), Tailliet
patent: 5905288 (1999-05-01), Ker
patent: 6172404 (2001-01-01), Chen et al.
patent: 6215135 (2001-04-01), Schröder
patent: 6492208 (2002-12-01), Cheng et al.

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