Lateral thyristor

Details Lateral thyristor Lateral thyristor

1990-08-13

1992-08-25

James, Andrew J.

357 43, 357 35, 357 34, H01L 2974, H01L 2702, H01L 2972

Patent

active

051423480

ABSTRACT:
A lateral thyristor is provided which includes a semiconductor substrate of a first conductivity type, an epitaxial layer of a second conductivity type formed on the semiconductor substrate, an anode diffusion layer of the first conductivity type formed in the epitaxial layer, a gate diffusion layer of the first conductivity type formed in the epitaxial layer, and a buried layer of the second conductivity type formed below the anode diffusion layer and extending between the semiconductor substrate and the epitaxial layer, wherein there is a region directly below the anode diffusion layer where the anode diffusion layer and the buried layer do not overlap each other, when the lateral thyristor is looked down upon in a direction perpendicular to the principal surface of the semiconductor substrate.

REFERENCES:
patent: 4246594 (1981-01-01), Mori
patent: 4532003 (1985-07-01), Beasom
patent: 4599631 (1986-07-01), Tsuzuki
patent: 4821095 (1989-04-01), Temple
patent: 4901132 (1990-02-01), Kuwano
patent: 4942440 (1990-07-01), Baliga et al.
patent: 4942446 (1990-07-01), Yakushiji

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