Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with other solid-state active device in integrated...
Patent
1994-01-24
1995-12-19
Larkins, William D.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with other solid-state active device in integrated...
257140, 257141, 257162, H01L 2712, H01L 29749, H01L 29739
Patent
active
054770653
ABSTRACT:
A composite integrated circuit device includes a semiconductor element chip, a positioning guide formed on the semiconductor element chip, and an electronic element set in a preset position on the semiconductor element chip in a self-alignment manner by means of the positioning guide and mounted thereon. Also disclosed is are lateral, thin film devices with tapered shapes to reduce breakdown.
REFERENCES:
patent: Re32784 (1988-11-01), Nakagawa et al.
patent: 3943547 (1976-03-01), Nagano et al.
patent: 4492974 (1985-01-01), Yoshida et al.
patent: 4641171 (1987-03-01), Bertotti et al.
patent: 4672407 (1987-06-01), Nakagawa et al.
patent: 4680604 (1987-07-01), Nakagawa et al.
patent: 4689647 (1987-08-01), Nakagawa et al.
patent: 4694313 (1987-09-01), Beasom
patent: 4760431 (1988-07-01), Nakagawa et al.
patent: 4761679 (1988-08-01), Stupp
patent: 4782372 (1988-11-01), Nakagawa et al.
patent: 4878957 (1989-11-01), Yamaguchi et al.
patent: 4879584 (1989-11-01), Takagi et al.
patent: 4881120 (1989-11-01), Nakagawa et al.
patent: 4914496 (1990-04-01), Nakagawa et al.
patent: 4928155 (1990-05-01), Nakagawa et al.
patent: 4963951 (1990-10-01), Adler et al.
patent: 5040043 (1991-08-01), Ohno et al.
IEDM '87, p. 758; S. Kawamura, et al; 1987 "3-D High-Voltage CMOS ICS by Recrystalized SOI Merged with Bulk Control-Unit".
IEDM '89, p. 293; H. R. Chang, et al; 1989, "MOS Trench Gate Field-Controlled Thyristor".
IBM Technical Disclosure Bulletin, vol. 25, No. 7A, Dec. 1982, pp. 3366-3367, K. H. Brown, et al., "Chip Mounting Using Mercury Tension Bands and Alignment Frames".
IBM Technical Disclosure Bulletin, vol. 23, No. 5, Oct. 1980, pp. 2156-2158, A. F. Galloway, et al., "Stand-Offs for Chip Alignment as Well as Controlled Collapse in Chip Joining".
Patent Abstracts of Japan, vol. 7, No. 236(E-205){1381}, Oct. 20, 1983, & JP-A-58-127379, Jul. 29, 1983, Y. Oomura, et al., "Insulation Gate Type Transistor".
Patent Abstracts of Japan, vol. 4, No. 75(E-13), May 31, 1980, & JP-A-55-043864, Mar. 27, 1980, H. Ito, "MIS Semiconductor Device".
Nakagawa Akio
Ogura Tsuneo
Kabushiki Kaisha Toshiba
Larkins William D.
LandOfFree
Lateral thin film thyristor with bevel does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Lateral thin film thyristor with bevel, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Lateral thin film thyristor with bevel will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-993582