Lateral theta device

Details Lateral theta device Lateral theta device

1992-06-30

1998-01-27

Monin, Donald

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 29, H01L 2924, H01L 2968

Patent

active

057124914

ABSTRACT:
A lateral THETA device formed of a sandwich of first and second layers of semiconductor material forming a heterojunction therebetween and a two dimensional carrier gas in the second layer. First and second spaced electrodes are disposed on the surface of the first layer for inducing first and second potential barriers to the flow of charge carriers in the carrier gas. Ohmic contacts are deposited in the base region defined between the electrodes and in the emitter and collector regions defined on opposing sides of the electrodes. The width of the first electrode is formed narrow enough so that the first potential barrier beneath the electrode permits tunnelling of charge carriers into the base region. The width of the second electrode is wide enough so that the second potential barrier prevents tunnelling. Electrons tunnelling through the first barrier are hot and ballistically move through the base region to the collector.

REFERENCES:
patent: 4286275 (1981-08-01), Heiblum
patent: 4538165 (1985-08-01), Chang et al.
patent: 4663643 (1987-05-01), Mimura
patent: 4672423 (1987-06-01), Fowler et al.
patent: 4675711 (1987-06-01), Harder et al.
patent: 4772932 (1988-09-01), Togashi et al.
patent: 4847666 (1989-07-01), Heremans et al.
patent: 4974037 (1990-11-01), Beneking

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