Lateral superradiance suppressing diode laser bar

Coherent light generators – Particular resonant cavity – Specified cavity component

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372 45, 372 46, 372 48, 357 16, 357 17, H01S 319

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048036919

ABSTRACT:
A diode laser bar producing a linear array of laser beams without lateral superradiance. The laser bar has a double-heterostructure or quantum well structure. Etched channels in the substrate create lateral corrugations in the subsequently deposited layers including the active region. The corrugations alternate between offset groove and plateau regions in the lateral direction but are straight in the longitudinal light propagating direction. Any laterally propagating light is interrupted at steps, between groove and plateau regions, by deflection, scattering or transmission out of the active region. Interruption may also be achieved with a plurality of parallel etched grooves extending in the longitudinal direction. The grooves which cut through the active region present a semiconductor-air interface for reflection and/or scattering of laterally propagating light out of the active region. Proton bombarded regions may be provided above the step regions in the top layers to channel current and prevent optical burnout of the step regions. A small percentage of laser light may be allowed to laterally propagate into adjacent active regions to promote phase locking across the laser bar.

REFERENCES:
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Streifer et al., "Current Status of (GaAl) As Diode Lasers", SPIE vol. 269, Integrated Optics, pp. 1-7, 1981.
Botez et al., "High-Power Individually Addressable Monolithic Array of Constricted Double Hetero-Junction Large-Optical-Cavity Lasers", Applied Physics Letters, pp. 1040-1042, Dec. 1982.
Holyonyak et al., "Quantum-Well Heterostructure Lasers", IEEE Journal of Quantum Electronics, vol. QE-16, No. 2, pp. 170-186, Feb. 1980.
Dupuis, "Metalorganic Chemical Vapor Deposition in III-V Semiconductors", Science, vol. 226, pp. 623-629, Nov. 1984.
Scifres et al., "Lateral Grating Array High Power CW Visible Semiconductor Laser", Electronics Letters, vol. 18, No. 13, pp. 549-550, Jun. 14, 1982.

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