Lateral subsurface zener diode making process

Fishing – trapping – and vermin destroying

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437 16, 437904, H01L 21385

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047585374

ABSTRACT:
A subsurface zener diode is formed in an N type semiconductor substrate such as the kind employed in the epitaxial layer found in silicon monolithic PN junction isolated integrated circuits. A P+ anode is ion implanted into and diffused from an oxide source and an N++ cathode is diffused within the confines of the anode. The cathode is surrounded with a counter-doped region that forces the PN junction breakdown subsurface. The resulting diode has a clean, sharp breakdown curve and the breakdown voltage can be tailored by controlling the anode deposition.

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Lui et al., IEEE J. Solid-State Circuits, "An Ion-Implanted Subsurface Monolithic Zener Diode", vol. SC-14, No. 4, Aug. 1979, pp. 782-784.

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