Lateral static induction transistor

Details Lateral static induction transistor Lateral static induction transistor

1994-10-24

1995-06-13

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257268, 257274, 257291, 257345, 257375, 257549, H01L 2980

Patent

active

054245621

ABSTRACT:
A lateral static induction transistor suited for use as a picture element of a solid state imaging device. The lateral static induction transistor includes a semiconductor substrate of a first conduction type of P type or N type, a first epitaxial layer of the same conduction type as the first conduction type which is formed on the semiconductor substrate, a second epitaxial layer of a second conduction type opposite to the first conduction type which is formed on the first epitaxial layer, a source zone and a plurality of drain zones which are formed in the second epitaxial layer near the surface thereof, and a plurality of gates each thereof being formed so as to partially lie over the source zone and one of the drain zones on the second epitaxial layer through an insulating layer.

REFERENCES:
patent: 4660062 (1987-04-01), Nishizawa et al.
patent: 5023190 (1991-06-01), Lee et al.

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