Lateral silicon carbide transistor

Details Lateral silicon carbide transistor Lateral silicon carbide transistor

1995-08-28

1997-05-06

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257285, 257409, 257489, H01L 310312

Patent

active

056273851

ABSTRACT:
A lateral silicon carbide transistor (10) utilizes a modulated channel region (18) to form an accumulation region that facilitates a low on-resistance. A doped region of the channel layer forms a channel insert (14) that also lowers the on-resistance of the transistor (10). Field plates (23,24) are utilized to facilitate providing a high breakdown voltage. A high resistance layer (29)between the field plates (23,24) also assists in increasing the breakdown voltage and decreasing on-resistance of the transistor (10).

REFERENCES:
patent: 5385855 (1995-01-01), Brown et al.
patent: 5448081 (1995-09-01), Malhi
V. Krishnamurthy et al., "Planar Depletion-Mode 6H-SiC MOSFETs", Inst. Phys. Conf. Ser. No. 137: Chapter 6, Paper presented at the 5th SiC and Related Materials Conf., Washington DC, 1993, pp. 483-486.

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