Lateral silicon carbide semiconductor device having a drift regi

Details Lateral silicon carbide semiconductor device having a drift regi Lateral silicon carbide semiconductor device having a drift regi

1997-10-28

2000-01-04

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

257 77, 257493, H01L 310256, H01L 310312, H01L 2358

Patent

active

060112786

ABSTRACT:
A lateral silicon carbide (SiC) semiconductor device includes a SIC substrate of a first conductivity type, a SiC epitaxial layer of the first conductivity type on the substrate and a SiC surface layer on the SiC epitaxial layer. The SiC surface layer has a SiC first region of the first conductivity type, a SiC lateral drift region of a second conductivity type opposite to that of the first conductivity type adjacent the first region and forming a p-n junction therewith, and a SiC second region of the second conductivity type spaced apart from the first region by the drift region. By providing the drift region with a variable doping level which increases in a direction from the first region to the second region, compact SiC semiconductor devices such as high-voltage diodes or MOSFETs can be formed which can operate at high voltages, high temperatures and high frequencies, thus providing a substantial advantage over known devices.

REFERENCES:
patent: 5300448 (1994-04-01), Merchant et al.
patent: 5374843 (1994-12-01), Williams et al.
patent: 5506421 (1996-04-01), Palmour
Electronics Letters, vol. 32, No. 20, pp. 1929-1931, 1996.

Affiliated with

Also associated with

Rating

Lateral silicon carbide semiconductor device having a drift regi does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Lateral silicon carbide semiconductor device having a drift regi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Lateral silicon carbide semiconductor device having a drift regi will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1074493