Lateral silicided diodes

Details Lateral silicided diodes Lateral silicided diodes

2008-06-03

2008-06-03

Fourson, George (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Tunneling pn junction device

C257S577000, C257S624000, C257SE27016, C257SE27013, C257SE27051, C257SE27073, C257SE29329, C257SE21503, C257SE21358, C257SE21366, C438S237000

Reexamination Certificate

active

07381997

ABSTRACT:
A structure and method of fabricating lateral diodes. The diodes include Schottky diodes and PIN diodes. The method of fabrication includes forming one or more doped regions and more trenches in a silicon substrate and forming metal silicides on the sidewalls of the trenches. The fabrication of lateral diodes may be integrated with the fabrication of field effect, bipolar and SiGe bipolar transistors.

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