Lateral semiconductor device

Details Lateral semiconductor device Lateral semiconductor device

2005-02-22

2005-02-22

Pham, Hoai (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Lateral structure

C257S328000

Reexamination Certificate

active

06858884

ABSTRACT:
A lateral semiconductor device (10) has a semiconductor layer (15) on an insulating substrate (16). The semiconductor layer (15) has a first region (12) of a first conduction type and a second region (13) of a second conduction type with a drift region (14) therebetween. The drift region (14) is provided by a third region (14″) of the first conduction type and a fourth region (14′) of the second conduction type. The third and fourth (drift) regions (14″,14′) are so arranged that when a reverse voltage bias is applied across the first and second regions (12,13) of the semiconductor layer (15), the third region (14″) has locally in the proximity of the first region (12) an excess of impurity charge relative to the fourth region (14′), and the fourth region (14′) has locally in the proximity of the second region (13) an excess of impurity charge relative to the third region (14″), and the total volume charge in the third region (14″) is substantially equal to the total volume charge in the fourth region (14′).

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Ng, R., et al., “Lateral Unbalanced Super Junction (USJ)/3D-RESURF for High Breakdown Voltage on SOI,” Jun. 4, 2001, pp. 395-398.
Udrea, F., et al., “Lateral Insulated Gate Bipolar Transistor (LIGBT) Structure Based on Partial Isolation SOI Technology,” May 8, 1997, pp. 907-909.
Chen, X.B., et al., “Lateral High-Voltage Devices Using an Optimized Variational Lateral Doping,” Int. J. Electronics, 1996, vol. 80, No. 3, pp. 449-459.
Amberetu, M., et al., 150-V Class Superjunction Power LDMOS Transistor Switch on SOI, Jun. 4, 2002, pp. 101-104.

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