Lateral semiconductor arrangement for power IGS

Details Lateral semiconductor arrangement for power IGS Lateral semiconductor arrangement for power IGS

1998-04-22

2000-05-23

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257143, 257378, 257120, H01L 2974, H01L 31111, H01L 2976, H01L 2994, H01L 31062

Patent

active

060668636

ABSTRACT:
A lateral semiconductor device, such as an LIGBT, LMOSFET, lateral bipolar transistor, lateral thyristor, or lateral MOS control thyristor, includes a device area surrounded by an n-type region in an n-channel lateral semiconductor device or by a p-type region in a p-channel lateral semiconductor device. Connecting the n-type region in the n-channel lateral semiconductor device or the p-type region in the p-channel lateral semiconductor device at a same potential as a first main electrode suppresses operation of parasitic transistors, as well as prevents carrier accumulation in isolated regions or a substrate. As a result, a switching loss of the lateral semiconductor device is greatly reduced, a switching speed of the lateral semiconductor device is improved, and a current capacity of the lateral semiconductor device is increased.

REFERENCES:
patent: 5258641 (1993-11-01), Kida et al.
patent: 5286995 (1994-02-01), Malhi
patent: 5432370 (1995-07-01), Kitamura et al.

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