Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1974-07-26
1976-09-21
Tupman, W.
Metal working
Method of mechanical manufacture
Assembling or joining
29591, 357 3, B01J 1700
Patent
active
039810739
ABSTRACT:
A lateral semiconductive device, such as a Gunn device or Impatt diode, is fabricated by depositing a barrier layer of beryllia over an epitaxial grown layer of N- type semiconductive material on an N+ type semiconductive wafer. The wafer is then thinned down, as by grinding and polishing. Electrode material is then deposited overlaying the N+ wafer layer for making ohmic contact thereto. The electrode material is etched to define at least a pair of laterally spaced electrodes, each making electrical connection to the epitaxial N- layer via the intervening layer of N+ wafer material. In the case of a Gunn device, the insulative barrier layer provides electrical insulation and prevents undesired leakage of current. In addition, it serves as a barrier to prevent metallic contact materials from diffusing into the epitaxial N- layer. Further, it serves as a heat sink between the active device and its mount. The electrode contacts are improved by their ohmic contact to the N+ wafer material on which the epitaxial N- active layer is grown.
REFERENCES:
patent: 2748041 (1956-05-01), Leverenz
patent: 3381182 (1968-04-01), Thornton
patent: 3820236 (1974-06-01), Haitz
Cole Stanley Z.
Nelson Richard B.
Stoddard Robert K.
Tupman W.
Varian Associates
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