Lateral resurf NPN with high holding voltage for ESD...

Details Lateral resurf NPN with high holding voltage for ESD... Lateral resurf NPN with high holding voltage for ESD...

2011-05-03

2011-05-03

Menz, Douglas M (Department: 2891)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Including diode

C438S236000

Reexamination Certificate

active

07935605

ABSTRACT:
In an ESD protection circuit an NPN BJT snapback device is provided with high breakdown voltage by including a RESURF region or by forming a PIN diode in the BJT. Holding voltage is increased by forming a sub-collector sinker region with the desired configuration.

REFERENCES:
patent: 7180158 (2007-02-01), Khemka et al.

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