Lateral resonant tunneling transistor with heterojunction barrie

Details Lateral resonant tunneling transistor with heterojunction barrie Lateral resonant tunneling transistor with heterojunction barrie

1994-05-02

1995-04-18

Sikes, William L.

Compositions

Electrolytes for electrical devices

257190, 257191, 257194, 257 23, 257 25, 2571831, H01L 21265, H01L 29205, H01L 2972

Patent

active

054081068

ABSTRACT:
A lateral resonant tunneling transistor is provided comprising heterojunction barriers (24) and a quantized region (33). Current between source contact (26) and drain contact (28) can be switched "ON" or "OFF" by placing an appropriate voltage on gate contacts (30) and (32). The potential on gate contacts (30) and (32) selectively modulate the quantum states within quantized region (33) so as to allow electrons to tunnel through heterojunction barrier (24) and quantized region (33).

REFERENCES:
patent: 4758870 (1988-07-01), Hase et al.
patent: 4908325 (1990-03-01), Bereaz
patent: 4912531 (1990-03-01), Reed et al.

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