Lateral resonant tunneling transistor having two non-symmetric q

Details Lateral resonant tunneling transistor having two non-symmetric q Lateral resonant tunneling transistor having two non-symmetric q

1996-09-04

1999-03-09

Crane, Sara

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257194, H01L 2906

Patent

active

058804846

ABSTRACT:
A lateral resonant tunneling transistor having two non-symmetric quantum dots is disclosed. When a negative voltage is supplied to each plurality of thin split gates, two non-symmetric quantum dots are formed owing to the formation of the potential barrier. Thus when a forward bias voltage is applied, the resonant tunneling phenomena occur twice successively. Through these two successive resonant tunneling phenomena and by lowering the height of the third potential barrier 6a, the resonant tunneling current can be maximized.

REFERENCES:
patent: 4672423 (1987-06-01), Fowler et al.
patent: 4962410 (1990-10-01), Kriman et al.
patent: 5285081 (1994-02-01), Ando
patent: 5485018 (1996-01-01), Ogawa et al.
van Houten, et al., Coulomb-Blockade Oscillations in Quantum Wire and Dots, Springer Series in Electronics and Photonics, vol. 31, Single-Electron Tunneling and Mesoscopic Devices, pp. 159-169 (1992).

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