Lateral resonant tunneling device having gate electrode aligned

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257 24, 257 39, H01L 2906

Patent

active

055043470

ABSTRACT:
A resonant tunneling transistor (400) with lateral carrier transport through tunneling barriers (404, 408) grown as a refilling of trenches etched partially into a transverse quantum well (410) and defining a quantum wire or quantum dot (406). The fabrication methods include use of angled deposition to create overhangs at the top of openings which define sublithographic separations for tunneling barrier locations.

REFERENCES:
patent: 4912531 (1990-03-01), Reed et al.
patent: 5198879 (1993-03-01), Ohshima
patent: 5283445 (1994-02-01), Saito

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Lateral resonant tunneling device having gate electrode aligned does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Lateral resonant tunneling device having gate electrode aligned , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Lateral resonant tunneling device having gate electrode aligned will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2018284

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.