Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1994-10-17
1996-04-02
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 24, 257 39, H01L 2906
Patent
active
055043470
ABSTRACT:
A resonant tunneling transistor (400) with lateral carrier transport through tunneling barriers (404, 408) grown as a refilling of trenches etched partially into a transverse quantum well (410) and defining a quantum wire or quantum dot (406). The fabrication methods include use of angled deposition to create overhangs at the top of openings which define sublithographic separations for tunneling barrier locations.
REFERENCES:
patent: 4912531 (1990-03-01), Reed et al.
patent: 5198879 (1993-03-01), Ohshima
patent: 5283445 (1994-02-01), Saito
Jovanovic Dejan
Randall John N.
Brady III W. James
Donaldson Richard L.
Guay John
Hoel Carlton H.
Jackson Jerome
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