Lateral resonant tunneling device having gate electrode aligned

Details Lateral resonant tunneling device having gate electrode aligned Lateral resonant tunneling device having gate electrode aligned

1994-10-17

1996-04-02

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 24, 257 39, H01L 2906

Patent

active

055043470

ABSTRACT:
A resonant tunneling transistor (400) with lateral carrier transport through tunneling barriers (404, 408) grown as a refilling of trenches etched partially into a transverse quantum well (410) and defining a quantum wire or quantum dot (406). The fabrication methods include use of angled deposition to create overhangs at the top of openings which define sublithographic separations for tunneling barrier locations.

REFERENCES:
patent: 4912531 (1990-03-01), Reed et al.
patent: 5198879 (1993-03-01), Ohshima
patent: 5283445 (1994-02-01), Saito

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