Lateral programmable polysilicon structure incorporating...

Details Lateral programmable polysilicon structure incorporating... Lateral programmable polysilicon structure incorporating...

2006-05-22

2008-10-28

Warren, Matthew E (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S481000, C257S538000, C257S910000, C257SE27051, C257SE29327

Reexamination Certificate

active

07443008

ABSTRACT:
A programmable element includes a diode and a programmable structure formed in a polysilicon layer isolated from a semiconductor substrate by a dielectric layer. The diode includes a first region and a second region of opposite conductivity types. The programmable structure includes a third region and a fourth region of opposite conductivity types. The first region of the diode and the third region of the programmable structure are electrically connected. In operation, the programmable structure is programmed to a low impedance state when a voltage exceeding a first breakdown voltage of the programmable structure is applied to reverse bias the programmable structure. The programmable element can be used to form a programmable array having very low parasitic capacitance, enabling the realization of a large and ultra fast programmable logic array.

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patent: 5270587 (1993-12-01), Zagar
patent: 6897543 (2005-05-01), Huang et al.

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