Lateral power MOSFET structure using silicon carbide

Details Lateral power MOSFET structure using silicon carbide Lateral power MOSFET structure using silicon carbide

1994-07-25

1996-01-23

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437100, 437979, H01L 21443

Patent

active

054864844

ABSTRACT:
A MOSFET device (100) having a silicon carbide substrate (102). A channel region (106) of a first conductivity type and an epitaxial layer (104) of a second conductivity type are located above the silicon carbide substrate (102). First and second source/drain regions (118), also of the first conductivity type are located directly within the channel region (106). No well region is placed between the first and second source/drain regions (118) and the channel region (106). A gate (120) is separated from the channel region (106) by an insulator layer (110). Insulator layer (110) has a thin portion (114) and a thick portion (116).

REFERENCES:
patent: 3339128 (1967-08-01), Olmstead et al.
patent: 4994413 (1991-02-01), Eshita
patent: 5057451 (1991-10-01), McCollum
patent: 5215934 (1993-06-01), Tzeng
patent: 5314834 (1994-05-01), Mazure et al.

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