Lateral power MOSFET structure using silicon carbide

Details Lateral power MOSFET structure using silicon carbide Lateral power MOSFET structure using silicon carbide

1993-02-22

1995-09-05

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257369, 257395, 257401, 257403, H01L 2702

Patent

active

054480817

ABSTRACT:
A MOSFET device (100) having a silicon carbide substrate (102). A channel region (106) of a first conductivity type and an epitaxial layer (104) of a second conductivity type are located above the silicon carbide substrate (102). First and second source/drain regions (118), also of the first conductivity type are located directly within the channel region (106). No well region is placed between the first and second source/drain regions (118) and the channel region (106). A gate (120) is separated from the channel region (106) by an insulator layer (110). Insulator layer (110) has a thin portion (114) and a thick portion (116).

REFERENCES:
patent: 4994413 (1991-02-01), Eshita
patent: 5170231 (1992-12-01), Fujii et al.
patent: 5233215 (1993-08-01), Baliga
J. W. Palmour, et al. "Characterization of Device Parameters In High-Temperature Metal-Oxide-Semiconductor field-effect transistors in .beta.-SiC Thin Films", 26 Apr. 1988, extracted from: J. Appl. Phys. 64(4), 15 Aug. 1988, pp. 2168-2177.
Robert F. Davis, et al. "Thin Film Deposition and Microelectronic and Optoelectronic Device Fabrication and Characterization in Monocrystalline Alpha and Beta Silicon Carbide", extracted from : IEEE vol. 79, No. 5, May 1991, pp. 677-701.
K. Furukawa, et al. "Insulated-Gate and Junction-Gate FET's of CVD-Grown .beta.-SiC", extracted from: IEEE vol. EDL-8, No. 2, Feb. 1987, pp. 48-49.
K. Shibahara, et al. "Inversion-Type N-Channel MOSFET Using Antiphase-Domain Free Cubic-SiC Grown on Si(100)" extracted from: (1986 International) Conference on Solid State Device and Materials, Tokyo, 1986, pp. 717-720.

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