Lateral power diodes

Details Lateral power diodes Lateral power diodes

2006-09-12

2006-09-12

Wilczewskl, Mary (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257S076000, C257S077000, C257S078000, C257S048000, C257S284000, C438S105000, C438S931000

Reexamination Certificate

active

07105875

ABSTRACT:
A lateral power diodes with an optimal drift doping formed in widebandgap semiconductors like Silicon Carbide, Aluminum Nitride and Gallium Nitride and Diamond are provided with a voltage rating greater 200V. Contrary to conventional vertical design of power diodes, a higher, optimum doping for a given thickness is critical in supporting higher anode/cathode blocking voltage, and lower on-resistance than vertical drift region designs. The backside contact and the anode junction must be able to support the rated blocking voltage of the device.

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