Lateral PNP transistor and the method of manufacturing the same

Details Lateral PNP transistor and the method of manufacturing the same Lateral PNP transistor and the method of manufacturing the same

2006-01-20

2008-11-04

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Forming lateral transistor structure

C438S206000, C438S294000, C438S335000, C438S339000, C257S593000, C257S596000, C257S592000, C257S578000, C257SE21507, C257SE21555, C257SE21609, C257SE27078, C257SE29187

Reexamination Certificate

active

07446012

ABSTRACT:
The present invention relates to a lateral PNP transistor and the method of manufacturing the same. The medium doping N-type base area and the light doping P−collector area were first introduced in the structure before the formation of P+doping emitter area and the collector area. The emitter-base-collector doping profile in the lateral and the base width of LPNP were similar to NPN. The designer can optimize the doping profile and area size of each area according to the request of the current gain (Hfe), collector-base breakdown voltage (BVceo), and early voltage (VA) of LPNP transistor. These advantages may cause to reduce the area and enhance performance of the LPNP transistor.

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