Lateral PNP transistor

Details Lateral PNP transistor Lateral PNP transistor

1980-04-18

1982-05-11

Munson, Gene M.

357 34, 357 48, 357 51, 357 91, 357 23, H01L 2972, H01L 2978, H01L 2702, H01L 2704

Patent

active

043297030

ABSTRACT:
Shallow, boron implanted regions are formed by ion implanting. Disclosed is a PNP transistor device (lateral type) having a P type emitter region preferably made with a boron implant.

REFERENCES:
patent: 4005469 (1977-01-01), Chang et al.
patent: 4109272 (1978-08-01), Herbst et al.

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